Schottkylisä

Schottky contact, also known as Schottky barrier, is a type of electrical junction formed between a metal and a semiconductor. It is named after Walter H. Schottky, who first described this phenomenon in 1938. Unlike the p-n junction, which is formed between two different types of semiconductors, the Schottky contact is formed between a metal and a semiconductor.

The Schottky barrier is characterized by a potential difference at the interface between the metal and the semiconductor. This potential difference arises due to the difference in work functions of the metal and the semiconductor. The work function is the minimum energy required to remove an electron from the surface of a material.

The Schottky contact exhibits unique electrical properties. It acts as a rectifying junction, allowing current to flow more easily in one direction than the other. This property makes it useful in various electronic devices, such as diodes and solar cells. The Schottky barrier also has a lower forward voltage drop compared to a p-n junction, which makes it more efficient in certain applications.

The height of the Schottky barrier can be influenced by factors such as the choice of metal and semiconductor, the surface condition of the semiconductor, and the presence of any interfacial layers. These factors can affect the electrical characteristics of the Schottky contact, making it a subject of ongoing research and development.