MOSFETTechnologie

MOSFET technology refers to metal-oxide-semiconductor field-effect transistors (MOSFETs), a class of transistor that forms a conductive channel between source and drain under the control of a gate electrode insulated from the channel by a thin oxide layer. The gate voltage modulates carrier concentration in the channel, enabling switching and amplification. MOSFETs come in two main types by channel doping: n-channel (NMOS) and p-channel (PMOS). They are also categorized by their operation mode: enhancement-mode devices require a gate voltage to induce a channel, while depletion-mode devices conduct at zero gate voltage and can be turned off by applying appropriate gate voltage.

Historically, MOSFETs were implemented in planar bulk silicon, enabling the microelectronics revolution. Scaling has driven improvements in switching speed, power efficiency, and integration density. To continue scaling, the industry moved from planar bulk to multi-gate and 3D structures such as FinFETs (fin field-effect transistors) and, more recently, gate-all-around devices (GAAFETs). The gate dielectric has progressed from silicon dioxide to high-k dielectrics with metal gates, reducing leakage while maintaining control.

MOSFETs are used across digital logic, memory, analog circuits, RF, and power electronics. In digital integrated circuits, high-density NMOS and PMOS devices implement logic gates. Power MOSFETs are optimized for high current and voltage switching, providing efficient power conversion in power supplies and motor drives. Key performance metrics include threshold voltage, transconductance, on-resistance, switching speed, and leakage current.

Challenges in MOSFET technology include short-channel effects, reliability concerns such as hot-carrier injection and bias-temperature instability, and leakage as devices scale. Ongoing research explores materials and architectures to extend scaling, including strained silicon, high-k dielectrics, and beyond-silicon approaches.