EUVlithografi

EUV lithography, or extreme ultraviolet lithography, is an advanced semiconductor manufacturing technique used to pattern features on silicon wafers. It utilizes extremely short wavelengths of light, specifically 13.5 nanometers, which are significantly smaller than those used in conventional deep ultraviolet (DUV) lithography. This shorter wavelength is crucial for printing ever-smaller transistors and other components required for next-generation microchips.

The process involves generating EUV light through a complex mechanism called laser-produced plasma (LPP). In LPP, a high-power laser beam strikes tiny droplets of tin, vaporizing them and creating a plasma that emits EUV light. This light is then reflected, not refracted like in DUV, by a series of precisely shaped mirrors due to the inability of EUV light to pass through lenses. The reflected light is then directed through a photomask, which contains the circuit pattern, and finally focused onto the silicon wafer coated with a light-sensitive material called photoresist.

EUV lithography is a critical technology for producing chips with feature sizes below 7 nanometers, enabling higher transistor density, improved performance, and lower power consumption. Its development has been a monumental undertaking, involving significant advancements in light sources, optics, masks, and photoresists. Companies like ASML are the primary providers of EUV lithography systems, which are essential for manufacturers like TSMC, Intel, and Samsung to produce leading-edge processors for smartphones, artificial intelligence, and high-performance computing.