GAAFET
Gate-All-Around Field-Effect Transistor (GAAFET) is a transistor architecture in which the gate electrode wraps around the conducting channel on all sides. This geometry provides superior electrostatic control of the channel compared with planar or FinFET structures, enabling better suppression of short-channel effects and improved current drive for continued device scaling. The channel is typically formed from a nanoscale semiconductor such as silicon and can take the form of a nanowire or a nanosheet, with either a single channel or multiple stacked channels to increase current capability.
Fabrication uses a gate dielectric and metal gate that surround the channel. In nanosheet implementations, several
GAAFETs offer improved gate control, higher drive current per footprint, and reduced leakage compared with FinFETs,
Challenges include complex three-dimensional lithography, deposition, and etching of nanoscale structures, variations in nanosheet or nanowire