EEPROMZellen

EEPROMZellen, short for Electrically Erasable Programmable Read-Only Memory cells, are fundamental components in non-volatile memory technology. Unlike RAM (Random Access Memory), EEPROM cells retain their stored data even when the power supply is removed. This non-volatility makes them ideal for applications requiring persistent storage of configuration data, firmware, or calibration information.

Each EEPROM cell typically consists of a floating-gate transistor. This transistor has a control gate and a floating gate, which is electrically isolated. Data is stored by trapping or removing electrons from the floating gate. Applying a specific voltage to the control gate causes electrons to tunnel through an insulating layer onto or off the floating gate. The presence or absence of these trapped electrons determines the binary state (0 or 1) of the cell, which can then be read by sensing the transistor's conductivity.

Programming (writing data) and erasing (clearing data) EEPROM cells require higher voltages than normal read operations. This is because a stronger electric field is needed to overcome the insulating barrier and move electrons onto or off the floating gate. While very robust, EEPROM cells have a finite number of programming/erase cycles, meaning they can only be written to and erased a limited number of times before becoming unreliable. Despite this limitation, their ability to retain data without power makes them a crucial element in many electronic devices.